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| PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BCV 62 B BCV 62 C Marking 3Js 3Ks 3Ls Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702-C2160 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS = 99 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg Values 30 30 6 100 200 200 300 150 - 65 ... + 150 Unit V mA mW C Rth JA Rth JS 240 170 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 62 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 - - hFE BCV 62 A BCV 62 B BCV 62 C VCEsat - - VBEsat - - VBE 600 - 650 - 750 820 700 850 - - 75 250 300 650 100 125 220 420 - 180 290 520 220 475 800 mV - - 15 5 nA A Values typ. max. Unit 30 30 6 - - - - - - V - Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BCV 62 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 A IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 C TA = 150 C Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Noise figure IC = 200 A, VCE = 5 V, RS = 2 k f = 1 kHz, B = 200 Hz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz fT Ccb Cibo F - - - - 250 3 8 2 - - - - dB MHz pF VBES 0.4 - - - - 1.8 V Values typ. max. Unit IC1 / IC2 IC1 / IC2 IE2 0.7 0.7 - - - 5 1.3 1.3 - mA h11e h12e h21e h22e - - 100 - 4.5 2 - 30 - - 900 - k 10- 4 - S 1) Without emitter resistor. Device mounted on alumina 15 mm x 16.5 mm x 0.7 mm. Semiconductor Group 3 BCV 62 Test circuit for current matching Note: Voltage drop at contacts: VCO < 2 VT = 16 mV 3 Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3 Note: BCV 62 with emitter resistors Semiconductor Group 4 BCV 62 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5 |
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